NPC is developing an enabling technology for the semiconductor chip manufacturing industry that will lead the industry into the atom-level manufacturing age. This novel, patented technology, overcomes fundamental limitations of current etching and deposition techniques. With the use of tightly controlled accelerated neutral particles, it enables etch with sub-nanometer accuracy without sputtering, leaves the surface smoothed to an angstrom level roughness, and eliminates complications associated with embedded charges. The company’s Accelerated Neutral Atom Beam technology is going to enable revolutionary change in the semiconductor industry. SEMATECH and Exogenesis Corp. formed NPC to commercialize ANAB technology in the semiconductor industry.
ANAB Fundamental Patents
U.S. Patent No. 8,629,393, “Method and Apparatus for Neutral Beam Processing Based on Gas Cluster Ion Beam Technology,” issued January 14, 2014. Claims include “An apparatus for providing an accelerated neutral beam comprising …”.
U.S. Patent No. 8,847,148, “Method and Apparatus for Neutral Beam Processing Based on Gas Cluster Ion Beam Technology,” issued September 30, 2014. Claims include “A method of treating a surface of a workpiece comprising steps of …”.
U.S. Patent No. 9,117,628, “Diagnostic Method and Apparatus for Characterization of a Neutral Beam and for Process Control Therewith,” issued August 25, 2015. Claims include “A sensor apparatus for characterizing a beam comprising …”.